Microelectronics International, Volume 32, Issue 1, January 2015.
Purpose The paper presents the possibility of technology of chemical metallization for the production of contact of photovoltaic cells. The developed technology allows you to perform a low cost contacts in any form. Design/methodology/approach The study used a multi and monocrystalline silicon plates. On the surface of the plates the contacts by the electroless metallization was made. After metallization stage, annealing process in a temperature range of (100700)C was conducted in order to obtain ohmic contact in a semiconductor material. Subsequently the electrical parameters of obtained structures was measured. Therefore, trial soldering was made which demonstrated that the layer is fully soldered. Findings Optimal parameters of the metallization bath was specified. The equations RS = f (metallization time), RS = f (temperature of annealing) and C-V characteristics were determined. As a result of conducted research, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated silicon plate is technology presented below in the following steps: Masking, Selective activation, Nickel-plating of activated plate. Such obtained metal layers have great variety in application, in particular can be used for the preparation of electric terminals in silicon solar cell. Originality/value The paper presents a new, unpublished method of manufacturing contacts in the structure of the photovoltaic cell.
Purpose The paper presents the possibility of technology of chemical metallization for the production of contact of photovoltaic cells. The developed technology allows you to perform a low cost contacts in any form. Design/methodology/approach The study used a multi and monocrystalline silicon plates. On the surface of the plates the contacts by the electroless metallization was made. After metallization stage, annealing process in a temperature range of (100700)C was conducted in order to obtain ohmic contact in a semiconductor material. Subsequently the electrical parameters of obtained structures was measured. Therefore, trial soldering was made which demonstrated that the layer is fully soldered. Findings Optimal parameters of the metallization bath was specified. The equations RS = f (metallization time), RS = f (temperature of annealing) and C-V characteristics were determined. As a result of conducted research, it has been stated that the most appropriate way leading to the production of soldered metal layers with good adhesion to the portion of selectively activated silicon plate is technology presented below in the following steps: Masking, Selective activation, Nickel-plating of activated plate. Such obtained metal layers have great variety in application, in particular can be used for the preparation of electric terminals in silicon solar cell. Originality/value The paper presents a new, unpublished method of manufacturing contacts in the structure of the photovoltaic cell.
